Deposition of copper iodide thin films by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods

被引:51
作者
Bulakhe, R. N. [1 ]
Shinde, N. M. [1 ]
Thorat, R. D. [1 ]
Nikam, S. S. [1 ]
Lokhande, C. D. [1 ]
机构
[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India
关键词
Chemical bath deposition; Successive ionic layer adsorption and reaction; CuI; Thin films; SOLAR-CELLS; MODULES;
D O I
10.1016/j.cap.2013.05.014
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we report structural, morphological, electrical studies of copper iodide (CuI) thin films deposited onto glass substrates by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods. CuI thin films were characterized for their structural, morphological and wettability studies by means of X-ray diffraction (XRD), FT-Raman spectroscopy, scanning electron microscopy (SEM), optical absorption, and contact angle measurement methods. Thickness of thin films was 1 +/- 0.1 mu m measured by gravimetric weight difference method. The CuI thin films were nanocrystalline, with average crystal size of similar to 60 nm. The FT-IR study confirmed the formation of CuI on the substrate surface. SEM images revealed the compact and cube like structure for CuI thin films deposited by CBD and SILAR methods, respectively. Optical absorption study revealed optical energy gaps as 2.3 and 3.0 eV for CBD and SILAR methods, respectively. Wettability study indicated that CuI thin films deposited by SILAR method are more hydrophobic as compared to CBD method. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:1661 / 1667
页数:7
相关论文
共 22 条
  • [1] Badyopadhyaya S., 2000, SOL ENERG MAT SOL C, V60, P323
  • [2] Cullity B.D., 1978, ELEMENTS XRAY DIFFRA, V2nd, P102
  • [3] Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method
    Dhere, Sunetra L.
    Latthe, Sanjay S.
    Kappenstein, Charles
    Mukherjee, S. K.
    Rao, A. Venkateswara
    [J]. APPLIED SURFACE SCIENCE, 2010, 256 (12) : 3967 - 3971
  • [4] Colloidal p-CuI-sensitized double-dye system
    Fernando, CAN
    Kumarawadu, I
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (02) : 214 - 218
  • [5] TEMPERATURE-DEPENDENCE OF RAMAN LINEWIDTH AND SHIFT IN CUI
    FUKUMOTO, T
    TABUCHI, K
    NAKASHIM.S
    MITUISHI, A
    [J]. OPTICS COMMUNICATIONS, 1974, 10 (01) : 78 - 80
  • [6] Crystal growth and characterization of CuI single crystals by solvent evaporation technique
    Gu, Mu
    Gao, Pan
    Liu, Xiao-Lin
    Huang, Shi-Ming
    Liu, Bo
    Ni, Chen
    Xu, Rong-Kun
    Ning, Jia-min
    [J]. MATERIALS RESEARCH BULLETIN, 2010, 45 (05) : 636 - 639
  • [7] Buffer layers in Cu(In,Ga)Se2 solar cells and modules
    Hariskos, D
    Spiering, S
    Powalla, M
    [J]. THIN SOLID FILMS, 2005, 480 : 99 - 109
  • [8] Electrodeposition and optical properties of highly oriented γ-CuI thin films
    Kang, Honglan
    Liu, Run
    Chen, Keli
    Zheng, Yifan
    Xu, Zhude
    [J]. ELECTROCHIMICA ACTA, 2010, 55 (27) : 8121 - 8125
  • [9] THE HIGH-TEMPERATURE STRUCTURAL BEHAVIOR OF COPPER(I) IODIDE
    KEEN, DA
    HULL, S
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (29) : 5793 - 5804
  • [10] Material requirements for CIS solar cells
    Konovalov, I
    [J]. THIN SOLID FILMS, 2004, 451 : 413 - 419