Near EF electronic structure of heavily boron-doped superconducting diamond

被引：8

作者：

Okazaki, H. ^{[1
]}

Yokoya, T. ^{[1
,2
]}

Nakamura, J. ^{[3
]}

Yamada, N. ^{[3
]}

Nakamura, T. ^{[4
]}

Muro, T. ^{[4
]}

Tamenori, Y. ^{[4
]}

Matsushita, T. ^{[4
]}

Takata, Y. ^{[5
]}

Tokushima, T. ^{[5
]}

Shin, S. ^{[5
]}

Takano, Y. ^{[6
]}

Nagao, M. ^{[6
]}

Takenouchi, T. ^{[7
]}

Kawarada, H. ^{[7
]}

Oguchi, T. ^{[8
]}

机构：

[1] Okayama Univ, Grad Sch Nat Sci & Technol, Okayama 7008530, Japan

[2] Japan Sci & Technol Agcy, CREST, Tokyo 1138656, Japan

[3] Univ Electrocommun, Dept Appl Phys & Chem, Tokyo 1828585, Japan

[4] Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795198, Japan

[5] RIKEN, Sayo, Hyogo 6795198, Japan

[6] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[7] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

[8] Grad Sch Adv Sci Matter, Dept Quantum Matter, Higashihiroshima, Hiroshima 7398530, Japan

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2008年 / 69卷 / 12期

基金：

日本学术振兴会;

关键词：

Photoelectron spectroscopy; Electronic structure; Fermi surface; Superconductivity;

D O I：

10.1016/j.jpcs.2008.06.006

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (T-c = 7.2 K) in order to Study the electronic structure near the Fermi level (E-F). Careful determination of measured momentum space that across F point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at E-F were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown Copyright (c) 2008 Published by Elsevier Ltd. All rights reserved.

引用

页码：2978 / 2981

页数：4

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