GaN-based p-i-n sensors with ITO contacts

被引：28
|
作者：
Chang, SJ [1 ]
Ko, TK
Su, YK
Chiou, YZ
Chang, CS
Shei, SC
Sheu, JK
Lai, WC
Lin, YC
Chen, WS
Shen, CF
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[3] So Taiwan Univ Technol, Dept Elect Engn, Tainan 70101, Taiwan
[4] Epitech Technol Corp, Hsinshi 744, Taiwan
[5] Natl Cheng Kung Univ, Dept Electroopt Sci & Engn, Tainan 70101, Taiwan
来源：
IEEE SENSORS JOURNAL | 2006年 / 6卷 / 02期
关键词：
GaN; indium-tin-oxide (ITO); p-i-n; photodetectors; strain layer superlattice (SLS);
D O I：
10.1109/JSEN.2006.870151
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nitride-based p-i-n sensors with indium-tin-oxide electrodes on Mg-doped AlGaN/GaN strain layer superlattice structure were fabricated and characterized. It was found that the fabricated sensors exhibit small dark current and large reverse breakdown voltage. With an incident wavelength of 355 run, we achieved a peak responsivity of 0.17 A/W which corresponds to 59% external quantum efficiency for sensors with 500 degrees C annealed ITO(70 nm) p-contacts.
引用
收藏
页码：406 / 411
页数：6
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