GaN-based p-i-n sensors with ITO contacts

被引：28

作者：

Chang, SJ ^{[1
]}

Ko, TK

Su, YK

Chiou, YZ

Chang, CS

Shei, SC

Sheu, JK

Lai, WC

Lin, YC

Chen, WS

Shen, CF

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] So Taiwan Univ Technol, Dept Elect Engn, Tainan 70101, Taiwan

[4] Epitech Technol Corp, Hsinshi 744, Taiwan

[5] Natl Cheng Kung Univ, Dept Electroopt Sci & Engn, Tainan 70101, Taiwan

来源：

IEEE SENSORS JOURNAL | 2006年 / 6卷 / 02期

关键词：

GaN; indium-tin-oxide (ITO); p-i-n; photodetectors; strain layer superlattice (SLS);

D O I：

10.1109/JSEN.2006.870151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based p-i-n sensors with indium-tin-oxide electrodes on Mg-doped AlGaN/GaN strain layer superlattice structure were fabricated and characterized. It was found that the fabricated sensors exhibit small dark current and large reverse breakdown voltage. With an incident wavelength of 355 run, we achieved a peak responsivity of 0.17 A/W which corresponds to 59% external quantum efficiency for sensors with 500 degrees C annealed ITO(70 nm) p-contacts.

引用

页码：406 / 411

页数：6

共 50 条

[11] High-performance visible-blind GaN-based p-i-n photodetectors
Butun, Bayram
Tut, Turgut
Ulker, Erkin
Yelboga, Tolga
Ozbay, Ekmel
APPLIED PHYSICS LETTERS, 2008, 92 (03)
[12] Suppression of Current Leakage Along Mesa Surfaces in GaN-Based p-i-n Diodes
Zheng, Bo-Sheng
Chen, Po-Yu
Yu, Chia-Jui
Chang, Yung-Fu
Ho, Chong-Long
Wu, Meng-Chyi
Hsieh, Kuang-Chien
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (09) : 932 - 934
[13] GaN-based p-i-n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates
Huang, Hongjuan
Yan, Dawei
Wang, Guosheng
Xie, Feng
Yang, Guofeng
Xiao, Shaoqing
Gu, Xiaofeng
CHINESE OPTICS LETTERS, 2014, 12 (09)
[14] GaN-based ultraviolet p-i-n photodiodes with buried p-layer structure grown by MOVPE
Lee, M. L.
Sheu, J. K.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (03) : H182 - H184
[15] Characteristics of GaN-based p-i-n photodetector at low temperature and performances of MCT/GaN-based infrared/ultraviolet dual-colour detector
Liu, Fuhao
Xu, Jintong
Wang, Ping
Li, Chao
Qian, Dahan
Wang, Nili
Li, Xiangyang
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 2011, 276
[16] Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates
Zou, Xinbo
Zhang, Xu
Lu, Xing
Tang, Chak Wah
Lau, Kei May
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (09) : 1158 - 1161
[17] Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector
Bao, Xichang
Xu, Jintong
Li, Chao
Qiao, Hui
Zhang, Yan
Li, Xiangyang
JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 581 : 289 - 292
[18] Ultraviolet photodetectors based on GaN with p-i-n structure
College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
Bandaoti Guangdian, 2007, 1 (33-35):
[19] Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring
Chen, M. C.
Sheu, J. K.
Lee, M. L.
Tun, C. J.
Chi, G. C.
APPLIED PHYSICS LETTERS, 2006, 89 (18)
[20] High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Substrates
Wang, Guosheng
Lu, Hai
Chen, Dunjun
Ren, Fangfang
Zhang, Rong
Zheng, Youdou
IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (07) : 652 - 654

← 1 2 3 4 5 →