GaN-based p-i-n sensors with ITO contacts

被引：28

作者：

Chang, SJ ^{[1
]}

Ko, TK

Su, YK

Chiou, YZ

Chang, CS

Shei, SC

Sheu, JK

Lai, WC

Lin, YC

Chen, WS

Shen, CF

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] So Taiwan Univ Technol, Dept Elect Engn, Tainan 70101, Taiwan

[4] Epitech Technol Corp, Hsinshi 744, Taiwan

[5] Natl Cheng Kung Univ, Dept Electroopt Sci & Engn, Tainan 70101, Taiwan

来源：

IEEE SENSORS JOURNAL | 2006年 / 6卷 / 02期

关键词：

GaN; indium-tin-oxide (ITO); p-i-n; photodetectors; strain layer superlattice (SLS);

D O I：

10.1109/JSEN.2006.870151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based p-i-n sensors with indium-tin-oxide electrodes on Mg-doped AlGaN/GaN strain layer superlattice structure were fabricated and characterized. It was found that the fabricated sensors exhibit small dark current and large reverse breakdown voltage. With an incident wavelength of 355 run, we achieved a peak responsivity of 0.17 A/W which corresponds to 59% external quantum efficiency for sensors with 500 degrees C annealed ITO(70 nm) p-contacts.

引用

页码：406 / 411

页数：6

共 22 条

[1] Chanard J, 2003, NEPHROLOGIE, V24, P3
[2] High brightness InGaN green LEDs with an ITO on n++-SPS upper contact
Chang, CS
Chang, SJ
Su, YK
Kuo, CH
Lai, WC
Lin, YC
Hsu, YP
Shei, SC
Tsai, JM
Lo, HM
Ke, JC
Shen, JK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (11) : 2208 - 2212
[3] Nitride-based LEDs with 800 °C grown p-AllnGaN-GaN double-cap layers
Chang, SJ
Wu, LW
Su, YK
Hsu, YP
Lai, WC
Tsai, JA
Sheu, JK
Lee, CT
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (06) : 1447 - 1449
[4] Highly reliable nitride-based LEDs with SPS plus ITO upper contacts
Chang, SJ
Chang, CS
Su, YK
Chuang, RW
Lin, YC
Shei, SC
Lo, HM
Lin, HY
Ke, JC
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (11) : 1439 - 1443
[5] GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
Chang, SJ
Lee, ML
Sheu, JK
Lai, WC
Su, YK
Chang, CS
Kao, CJ
Chi, GC
Tsai, JA
[J]. IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) : 212 - 214
[6] InGaN-GaN multiquantum-well blue and green light-emitting diodes
Chang, SJ
Lai, WC
Su, YK
Chen, JF
Liu, CH
Liaw, UH
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) : 278 - 283
[7] 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
Chang, SJ
Kuo, CH
Su, YK
Wu, LW
Sheu, JK
Wen, TC
Lai, WC
Chen, JF
Tsai, JM
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) : 744 - 748
[8] Schottky barrier detectors on GaN for visible-blind ultraviolet detection
Chen, Q
Yang, JW
Osinsky, A
Gangopadhyay, S
Lim, B
Anwar, MZ
Khan, MA
Kuksenkov, D
Temkin, H
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2277 - 2279
[9] Nitride-based p-i-n bandpass photodetectors
Chiou, YZ
[J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) : 172 - 174
[10] High detectivity InGaN-GaN multiquantum well p-n junction photodiodes
Chiou, YZ
Su, YK
Chang, SJ
Gong, J
Lin, YC
Liu, SH
Chang, CS
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (05) : 681 - 685

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