Improved Performance of Passive-Matrix Micro-LED Displays Using a Multi-Function Passivation Structure

被引：19
作者：
Chen, Po-Wei [1 ]
Hsiao, Po-Wen [1 ]
Shen, Po-Chen [2 ]
Chen, Hsuan-Jen [1 ]
Chen, Yi-An [1 ]
Horng, Ray-Hua [3 ]
Wuu, Dong-Sing [1 ,4 ,5 ]
机构：
[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan
[2] Epileds Technol Inc, Tainan 741148, Taiwan
[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[4] Natl Chung Hsing Univ, Innovat & Dev Ctr Sustainable Agr, Taichung 40227, Taiwan
[5] Natl Chung Hsing Univ, I Ctr Adv Sci & Technol, Taichung 40227, Taiwan
来源：
IEEE PHOTONICS JOURNAL | 2020年 / 12卷 / 04期
关键词：
Light emitting diodes; Passivation; Distributed Bragg reflectors; Resists; Metals; Etching; Planarization; Passive-matrix; mu-LED; planarization; DBR structure; oblique angles; display; LIGHT EXTRACTION; FABRICATION;
D O I：
10.1109/JPHOT.2020.3002554
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The enhanced light output efficiency of passive-matrix micro light-emitting-diode (LED) display was achieved by employing the tapered sidewalls and distributed-Bragg-reflector (DBR) passivation structure. The oblique angles at the bottom of multi-quantum wall and n-GaN are 48.9 degrees and 21.8 degrees, which can favor the planarization structure of pixel interconnection. As increasing the number of DBR (SiO2/TiO2) stacking from 3.5 to 5.5 pairs, the reflectance increased obviously from 81.4% to 98.0% at the wavelength of 450 nm. As the micro-LED display with a multi-function DBR structure, the output power of 1.07 mW under 1 mA, the external-quantum efficiency of 42% under 0.2 mA, and the luminance of 435 nits were obtained.
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页数：12
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