Investigation of silicon nanoclusters embedded in ZnO matrices deposited by cosputtering system

被引：7

作者：

Lai, Li-Wen ^{[1
,2
]}

Liu, Chih-Hong ^{[3
]}

Lee, Ching-Ting ^{[1
,2
]}

Lou, Li-Ren ^{[1
,2
]}

Yeh, Wen-Yung ^{[4
]}

Chu, Mu-Tao ^{[4
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan

[4] Ind Technol Res Inst, Optoelect Semicond & Syst Applicat Div, Hsinchu 310, Taiwan

来源：

JOURNAL OF MATERIALS RESEARCH | 2008年 / 23卷 / 09期

关键词：

D O I：

10.1557/JMR.2008.0309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A co-sputtering system was used to deposit silicon nanoclusters embedded in zinc oxide matrix (Si:ZnO) at low temperature without post-annealing. By adjusting the radio frequency power of the Si target during co-sputtering, SI:ZnO films with various crystallographic structures can be obtained. Silicon nanoclusters embedded in the zinc oxide matrix were examined using a high-resolution transmission electron microscope, x-ray diffractometer, and Fourier transformation infrared spectrometry. By comparing with photoluminescence spectra, we can clearly identify quantum confinement effect of silicon nanoclusters embedded in the ZnO matrix.

引用

页码：2506 / 2511

页数：6

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