Kinetic properties of p-type Mg2Ge0.4Sn0.6 solid solutions

被引：7

作者：

Fedorov, MI ^{[1
]}

Zaitsev, VK ^{[1
]}

Isachenko, GN ^{[1
]}

Eremin, IS ^{[1
]}

Gurieva, EA ^{[1
]}

Konstantinov, PP ^{[1
]}

Shabaldin, AA ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

ICT: 2005 24TH INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 2005年

关键词：

D O I：

10.1109/ICT.2005.1519900

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

In this paper the results of the study of kinetic properties of the Mg2Ge0.4Sn0.6 solid solution are presented. It is shown that it is possible to produce the Mg2Ge0.4Sn0.6 solid solution of p-type with various hole concentration (up to 4.10(19)cm(-3)). Seebeck and Hall coefficients and electrical resistivity are measured in the temperature range 100 - 800 K. The hole mobility in these solid solutions is lower than electron mobility. Some parameters of valence band are determined. The data obtained are compared with those for Mg2Si0.4Sn0.6. The prospects of using these materials in thermoelectric generators are estimated.

引用

页码：110 / 113

页数：4

共 6 条

[1] Kinetic properties of p-type Mg2Si0.4Sn0.6 solid solutions [J].

Fedorov, MI ;

Zaitsev, VK ;

Eremin, IS ;

Gurieva, EA ;

Burkov, AT ;

Konstantinov, PP ;

Vedernikov, MV ;

Samunin, AY ;

Isachenko, GN .

TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03, 2003, :134-137

[2]

GRUZINOV BF, 1972, PRIB TEKH EKSP, P225

[3] SEMICONDUCTING PROPERTIES OF MG2GE SINGLE CRYSTALS [J].

REDIN, RD ;

MORRIS, RG ;

DANIELSON, GC .

PHYSICAL REVIEW, 1958, 109 (06) :1916-1920

[4]

Winkler U., 1955, HELV PHYS ACTA, V28, P633

[5]

ZAITSEV VK, 1995, SEMICONDUCTORS+, V29, P490

[6]

ZAITSEV VK, 2005, THERMOELECTRICS THEI, P33

← 1 →