Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with strongly coupled double quantum wells

被引：6

作者：

Arapov, Yu. G. ^{[1
]}

Gudina, S. V. ^{[1
]}

Neverov, V. N. ^{[1
]}

Podgornykh, S. M. ^{[1
,2
]}

Yakunin, M. V. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Inst Met Phys, Ural Div, Ekaterinburg 650041, Russia

[2] Ural State Tech Univ, Ekaterinburg 620002, Russia

来源：

LOW TEMPERATURE PHYSICS | 2013年 / 39卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

ELECTRON-SCATTERING; QUASI-PARTICLE; TIME; RELAXATION; RESONANCE; TRANSPORT;

D O I：

10.1063/1.4775751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Longitudinal rho(xx)(B) and Hall rho(xy)(B) magnetoresistances are experimentally investigated as a function of in-plane and transverse magnetic fields in n-InGaAs/GaAs nanostructures with strongly-coupled double quantum wells in the temperature range T = 1.8-70 K and magnetic fields B = 0-9.0 T. Experimental data on the temperature dependence of quantum lifetime in diffusive (k(B)T/tau(tr) << 1) and ballistic (k(B)T/tau(tr) >> 1) regimes are reported. It has been found that in the ballistic regime in the temperature range where k(B)T/E-F < 0.1, the observed quadratic temperature dependence of quantum lifetime is determined by inelastic electron-electron scattering. However, the temperature dependence of quantum lifetime cannot be quantitatively described by the existing theories in the whole temperature range. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775751]

引用

页码：43 / 49

页数：7

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