Perimeter recombination in thin film solar cells

被引:3
作者
Belghachi, Abderrahmane [1 ]
机构
[1] Univ Bechar, Lab Semicond Devices Phys, Bechar 08000, Algeria
关键词
Solar cell; MEMS; Surface recombination;
D O I
10.1007/s10825-006-0123-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Surface recombination has a profound effect on the performance of a solar cell, at the illuminated surface reduces its photocurrent and along the cell's perimeter increases its dark current. The perimeter recombination current has two components; the first is due to recombination at the surface that intersects the space-charge layer while the second originates from recombination at the surface of quasi-neutral regions. The current due to recombination at the depleted layer surface is treated in a similar way to that of the bulk, using a simple model. We present an analytical form that produces results that agree well with reported experimental findings. The recombination current outside the space-charge region is of two-dimensional nature, it represents lateral diffusion of minority carriers from the boundary of the depleted layer to the perimeter. This current is calculated by solving numerically a two-dimensional continuity equation. As the ratio of perimeter to area is increased the perimeter current acquires important proportions, consequently the expected bulk recombination current becomes insignificant.
引用
收藏
页码:279 / 283
页数:5
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