Study on interface characteristics in amorphous indium-gallium-zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

被引：8

作者：

Wu, Chenfei ^{[1
]}

Huang, Xiaoming ^{[2
]}

Lu, Hai ^{[1
]}

Yu, Guang ^{[1
]}

Ren, Fangfang ^{[1
]}

Chen, Dunjun ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, Youdou ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Peter Grunberg Res Ctr, Nanjing 210003, Jiangsu, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2015年 / 109卷

基金：

中国国家自然科学基金;

关键词：

Amorphous indium gallium zinc oxide (a-IGZO); Thin film transistor (TFT); Scattering mechanism; Low-frequency noise; Interface trap; FIELD-EFFECT TRANSISTORS; MOS-TRANSISTORS; FLICKER NOISE; 1/F NOISE; MOSFETS; DEVICES; METAL; SEMICONDUCTORS; FLUCTUATIONS; PERFORMANCE;

D O I：

10.1016/j.sse.2015.03.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the interface properties of amorphous indium-gallium-zinc oxide thin film transistors annealed at different temperatures ranging from 150 to 250 degrees C are studied by temperature dependent mobility and low-frequency noise (LFN) characterizations. The dominant scattering mechanism for carrier transport is found to be Coulomb scattering based on gate bias and temperature dependent mobility measurement. Meanwhile, as the annealing temperature increases, the dominant mechanism of LFN within the device channel varies from carrier number fluctuation to carrier mobility fluctuation. The border trap density as well as the distribution properties of charged border traps is deduced. The present results suggest that annealing at higher temperature has a more remarkable effect on removing deeper border traps than traps closer to the channel/dielectric interface. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：37 / 41

页数：5

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