Scaling trends of cosmic rays induced soft errors in static latches beyond 0.18μ

被引：74

作者：

Karnik, T ^{[1
]}

Bloechel, B ^{[1
]}

Soumyanath, K ^{[1
]}

De, V ^{[1
]}

Borkar, S ^{[1
]}

机构：

[1] Intel Corp, Microproc Res Labs, Hillsboro, OR 97124 USA

来源：

2001 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VLSIC.2001.934195

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes an experiment to characterize soft error rate of static latches for neutrons using a neutron beam, with measured soft error rates as a function of diffusion collection areas and supply voltages. The paper also quantifies the effectiveness of two promising hardening techniques and scaling trends.

引用

页码：61 / 62

页数：2

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