Advances in Electrochemical Micromachining of Silicon: Towards MEMS Fabrication

被引:9
作者
Bassu, Margherita [1 ]
Strambini, Lucanos M. [1 ]
Barillaro, Giuseppe [1 ]
机构
[1] Univ Pisa, Dipartimento Ingn Informaz Elettron Informat Tele, I-56122 Pisa, Italy
来源
EUROSENSORS XXV | 2011年 / 25卷
关键词
MEMS; silicon micromachining; electrochemical etching;
D O I
10.1016/j.proeng.2011.12.409
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In this work, a significant step towards the fabrication of very high aspect-ratio complex microsystems by silicon electrochemical micromachining in HF-based electrolytes (ECM) is given. High aspect-ratio MEMS structures, with different shape and dimensions, consisting of inertial free-standing masses equipped with comb-fingers and suspended by springs from the substrate were fabricated by exploiting advanced features of the ECM technology. (C) 2011 Published by Elsevier Ltd.
引用
收藏
页数:4
相关论文
共 6 条
[1]   Fabrication of regular silicon microstructures by photo-electrochemical etching of silicon [J].
Barillaro, G ;
Bruschi, P ;
Diligenti, A ;
Nannini, A .
PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 9, 2005, 2 (09) :3198-3202
[2]   Electrochemical etching in HF solution for silicon micromachining [J].
Barillaro, G ;
Nannini, A ;
Piotto, M .
SENSORS AND ACTUATORS A-PHYSICAL, 2002, 102 (1-2) :195-201
[3]   Aspect ratio dependent etching lag reduction in deep silicon etch processes [J].
Lai, S. L. ;
Johnson, D. ;
Westerman, R. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (04) :1283-1288
[4]   THE PHYSICS OF MACROPORE FORMATION IN LOW DOPED N-TYPE SILICON [J].
LEHMANN, V .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (10) :2836-2843
[5]   Pushing the limits of macroporous silicon etching [J].
Matthias, S ;
Müller, F ;
Schilling, J ;
Gösele, U .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (07) :1391-1396
[6]  
Zhang Z. L., 1992, Journal of Micromechanics and Microengineering, V2, P31, DOI 10.1088/0960-1317/2/1/007