Preparation and characterization of bismuth silicate (BSO) thin film by the sol-gel technique

被引:7
|
作者
Jain, M [1 ]
Tripathi, AK [1 ]
Goel, TC [1 ]
Pillai, PKC [1 ]
机构
[1] Indian Inst Technol, Dept Phys, New Delhi 110016, India
关键词
D O I
10.1023/A:1006698515815
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
BSO films were prepared by the sol-gel technique using Bi(NO3)3·5H2O and Si(OC2H5)4 as source materials. The structural, electrical and pyroelectric properties of the resulting films were studied. The results confirm the potential of the films for use as pyroelectric detectors besides the usual use as non-linear optical materials.
引用
收藏
页码:479 / 481
页数:3
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