Heteroepitaxial growth of Ge on compliant strained nano-structured Si lines and dots on (001) silicon on insulator substrate

被引:7
作者
Zaumseil, Peter [1 ]
Yamamoto, Yuji [1 ]
Schubert, Markus Andreas [1 ]
Schroeder, Thomas [1 ,2 ]
Tillack, Bernd [1 ,3 ]
机构
[1] IHP, D-15236 Frankfurt, Germany
[2] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany
[3] Tech Univ Berlin, D-10587 Berlin, Germany
关键词
Ge epitaxy; Nano-structured Si; Nano-heteroepitaxy; X-ray diffraction; SI(001); NANOHETEROEPITAXY; DEPOSITION; GERMANIUM; LAYERS;
D O I
10.1016/j.tsf.2013.08.060
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
On the way to integrate lattice mismatched semiconductors on Si(001) we studied the Ge/Si heterosystem with the aim of a misfit dislocation free deposition that offers the vision to integrate defect-free alternative semiconductor structures on Si. Periodic Ge nano-structures (dots and lines) were selectively grown by chemical vapor deposition on Si nano-islands on silicon on insulator substrate with a thin (about 10 nm) SiGe buffer layer between Si and Ge. The strain state of the structures wasmeasured by grazing incidence and specular diffraction using laboratory-based X-ray diffraction technique. The SiGe improves the compliance of the Si compared to direct Ge deposition, prevents plastic relaxation during growth, and allows elastic relaxation before Ge is deposited on top. As a result, an epitaxial growth of Ge on Si fully free of misfit dislocations was achieved. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:50 / 54
页数:5
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