Studying the Composition and Phase State of Thin PZT Films Obtained by High-Frequency Magnetron Sputtering under Variation of Working Gas Pressure

被引：8

作者：

Dolgintsev, D. M. ^{[1
]}

Pronin, V. P. ^{[1
]}

Kaptelov, E. Yu. ^{[1
,2
]}

Senkevich, S. V. ^{[1
,2
]}

Pronin, I. P. ^{[1
,2
]}

机构：

[1] Herzen State Pedag Univ Russia, St Petersburg 191186, Russia

[2] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2019年 / 45卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

LEAD-ZIRCONATE-TITANATE; POLARIZATION;

D O I：

10.1134/S1063785019030258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Variation of the working gas pressure (from 8 to 2 Pa) during RF magnetron sputtering deposition of thin perovskite lead zirconate titanate (PZT) films revealed strong changes in their lead content, which decreased below the stoichiometric level and led to the formation of a two-phase (perovskite-pyrochlore) structure upon subsequent high-temperature annealing. Measurements of the composition of perovskite islands in the two-phase films showed that the lead content in these islands was equal to or greater than stoichiometric. These results lead to the conclusion that the obtained PZT films are free of lead vacancies.

引用

页码：246 / 249

页数：4

共 17 条

[1] Effect of the Synthesis Conditions on the Properties of Polycrystalline Films of Lead Zirconate Titanate of NonStoichiometric Composition [J].

Afanas'ev, V. P. ;

Vorotilov, K. A. ;

Mukhin, N. V. .

GLASS PHYSICS AND CHEMISTRY, 2016, 42 (03) :295-301

[2] Specific properties of the PZT-based thin-film capacitor structures with excess lead oxide [J].

Afanas'ev, VP ;

Mosina, GN ;

Petrov, AA ;

Pronin, IP ;

Sorokin, LM ;

Tarakanov, EA .

TECHNICAL PHYSICS LETTERS, 2001, 27 (06) :467-469

[3] Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films? [J].

Aggarwal, S ;

Madhukar, S ;

Nagaraj, B ;

Jenkins, IG ;

Ramesh, R ;

Boyer, L ;

Evans, JT .

APPLIED PHYSICS LETTERS, 1999, 75 (05) :716-718

[4]

[Anonymous], 1991, FERROELECTRIC MAT TH

[5] Physics of thin-film ferroelectric oxides [J].

Dawber, M ;

Rabe, KM ;

Scott, JF .

REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1083-1130

[6] Self-polarized high piezoelectricity and its memory effect in ferroelectric single crystals [J].

He, Chao ;

Wang, Zujian ;

Li, Xiuzhi ;

Yang, Xiaoming ;

Long, Xifa ;

Ye, Zuo-Guang .

ACTA MATERIALIA, 2017, 125 :498-505

[7] Origin of voltage offset and built-in polarization in in-situ sputter deposited PZT thin films [J].

Hiboux, S ;

Muralt, P .

INTEGRATED FERROELECTRICS, 2001, 36 (1-4) :83-92

[8]

Jaffe B, 1971, PIEZOELECTRIC CERAMI

[9] Recent Progress on PZT Based Piezoelectric Energy Harvesting Technologies [J].

Kang, Min-Gyu ;

Jung, Woo-Suk ;

Kang, Chong-Yun ;

Yoon, Seok-Jin .

ACTUATORS, 2016, 5 (01)

[10]

Kholkin AL, 1998, INTEGR FERROELECTR, V22, P1045

← 1 2 →