Structure-dependent vibrational lifetimes of hydrogen in silicon -: art. no. 135501

被引：47

作者：

Lüpke, G

Zhang, X

Sun, B

Fraser, A

Tolk, NH

Feldman, LC

机构：

[1] Coll William & Mary, Dept Appl Sci, Williamsburg, VA 23187 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.88.135501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The lifetimes of the Si-H vibrational stretch modes of the H-2* ( 2062 cm(-1)) and HV . VH(110) (2072.5 cm(-1)) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect H-2* has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex HV . VH(110) is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of H-2* is governed by TA phonons, while HV . VH(110) is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.

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页码：4 / 135501

页数：4

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