Digital versus analog resistive switching depending on the thickness of nickel oxide nanoparticle assembly

被引：59

作者：

Kim, Hyung Jun ^{[1
]}

Baek, Yoon-Jae ^{[1
]}

Choi, Young Jin ^{[2
]}

Kang, Chi Jung ^{[2
]}

Lee, Hyun Ho ^{[3
]}

Kim, Hyun-Mi ^{[4
]}

Kim, Ki-Bum ^{[4
]}

Yoon, Tae-Sik ^{[1
]}

机构：

[1] Myongji Univ, Dept Mat Sci & Engn, Gyeonggi Do 449728, South Korea

[2] Myongji Univ, Dept Phys, Gyeonggi Do 449728, South Korea

[3] Myongji Univ, Dept Chem Engn, Gyeonggi Do 449728, South Korea

[4] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

来源：

RSC ADVANCES | 2013年 / 3卷 / 43期

基金：

新加坡国家研究基金会;

关键词：

CHARGE-LIMITED CURRENTS; NIO; DEVICE;

D O I：

10.1039/c3ra42683a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The thickness-dependent digital versus analog resistive switching of nickel oxide (NiOx) nanoparticle assemblies was investigated in a Ti/NiOx/Pt structure. The NiiO(x) nanoparticles were chemically synthesized with similar to 5 nm diameter. The Ti/NiiO(x)/Pt structure with assembly thickness of similar to 60 nm exhibited the digital-type bipolar resistive switching. However, the assembly with a thickness of similar to 90 nm presented analog resistive switching with gradually decreasing resistance when sweeping -V while increasing resistance after applying +V. Repeating -V pulses decreased the resistance sequentially, but the high resistance was restored sequentially by repeating +V pulses, which is analogous to the potentiation and depression of adaptive synaptic motion.

引用

页码：20978 / 20983

页数：6

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