Palladium-vacancy pairs in p-type and n-type germanium

被引:5
作者
Abiona, A. A. [1 ]
Kemp, W. [1 ]
Timmers, H. [1 ]
机构
[1] Univ New S Wales, UNSW Canberra, Sch Phys Environm & Math Sci, Canberra, BC 2610, Australia
来源
HYPERFINE INTERACTIONS | 2013年 / 221卷 / 1-3期
关键词
Semiconductor defects; Germanium; Metal induced crystallization; Perturbed angular correlation; THIN-FILM; CRYSTALLIZATION; DEFECTS; GE;
D O I
10.1007/s10751-012-0667-7
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
Time differential perturbed angular correlation spectroscopy was performed for n-type and p-type germanium samples that had been recoil-implanted with the probe Pd-100/Rh-100. Two different measurements with the detectors aligned along < 100 > and < 110 > crystallographic directions of germanium confirm that the palladium probe pairs with the nearest neighbour vacancy and not a dopant. The pairs interact with a coupling constant of upsilon (Q) = 10.7(2) MHz and this agrees with what has been observed in undoped Ge. This further suggests that the palladium pairs with a vacancy in germanium, doped or un-doped. It was also observed that there are more Pd-V pairs in Ga-doped than there are in Sb-doped Ge. DFT calculations of the binding energies of the Pd-defect complexes support the experimental observations.
引用
收藏
页码:65 / 72
页数:8
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