Barium zirconate titanate Ba(ZrxTi1-x)O-3 (BZT) ceramics have been fabricated by conventional solid state route. The dielectric properties and ferroelectric relaxor behavior were investigated as a function of Zr content and DC bias field. It was found that the relaxor behavior of BZT is enhanced with the increase in Zr content. The temperature of maximum dielectric peak (T-m) of BZT ceramic is greatly increased with DC bias field (E) up to a certain threshold field E-t, below which T-m starts to increase gradually: This behavior could be associated with the size of domain. The relationship between temperature and dielectric tunability is also discussed in details. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Tang, XG
;
Chew, KH
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机构:Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Chew, KH
;
Chan, HLW
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机构:Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Tang, XG
;
Chew, KH
论文数: 0引用数: 0
h-index: 0
机构:Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Chew, KH
;
Chan, HLW
论文数: 0引用数: 0
h-index: 0
机构:Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China