Recent Advances in Poly-Silicon Crystallization

被引：0
|
作者：
Klene, Brian [1 ]
Knowles, David S. [1 ]
Bowen, M. Shane [1 ]
Turk, Brandon A. [1 ]
机构：
[1] TCZ, San Diego, CA USA
来源：
IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS | 2006年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the most recent experimental results on Thin-beam Directional X'tallization (TDX), a rapid excimer-laser-based crystallization method for creating extremely high-quality large-grained polycrystalline silicon films on glass substrates. We will present experimental data obtained with our prototype Gen 2 tool, and discuss the ability to produce different types of poly-Si material.
引用
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页码：323 / 327
页数：5
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