Photoluminescence Ring Formation in Coupled Quantum Wells: Excitonic Versus Ambipolar Diffusion

被引：31

作者：

Stern, M. ^{[1
]}

Garmider, V. ^{[1
]}

Segre, E. ^{[1
]}

Rappaport, M. ^{[1
]}

Umansky, V. ^{[1
]}

Levinson, Y. ^{[1
]}

Bar-Joseph, I. ^{[1
]}

机构：

[1] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.101.257402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this Letter, we study the diffusion properties of photoexcited carriers in coupled quantum wells around the Mott transition. We find that the diffusion of unbound electrons and holes is ambipolar and is characterized by a large diffusion coefficient, similar to that found in p-i-n junctions. Correlation effects in the excitonic phase are found to significantly suppress the carriers' diffusion. We show that this difference in diffusion properties gives rise to the appearance of a photoluminescence ring pattern around the excitation spot at the Mott transition.

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页数：4

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