Effects of Si(001) surface amorphization on ErSi2 thin film

被引：8
作者：
Tan, EJ
Kon, ML
Pey, KL
Lee, PS
Zhang, YW
Wang, WD
Chi, DZ
机构：
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[3] Natl Univ Singapore, Dept Mat Sci, Singapore 119260, Singapore
[4] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
来源：
THIN SOLID FILMS | 2006年 / 504卷 / 1-2期
关键词：
erbium silicide; amorphization; thin film; morphology;
D O I：
10.1016/j.tsf.2005.09.067
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphization implant. It was found that the ErSi2 thin film becomes smoother but less textured and less epitaxial with Si(001) with increasing degree of the Si surface amorphization. In addition, an increased oxygen penetration during rapid thermal annealing occurs with increasing substrate amorphization. (c) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码：157 / 160
页数：4
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