Radiation Test Challenges for Scaled Commercial Memories

被引：10

作者：

LaBel, Kenneth A. ^{[1
]}

Ladbury, Ray L. ^{[1
]}

Cohn, Lewis M. ^{[2
]}

Oldham, Timothy R. ^{[1
]}

机构：

[1] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[2] Def Threat Reduct Agcy, Ft Belvoir, VA 22060 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 04期

关键词：

CMOS; radiation effects; commercial memories;

D O I：

10.1109/TNS.2008.2001481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As sub-100 mn CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this paper, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this paper, we shall discuss these devices with emphasis on considerations for test and qualification methods required.

引用

页码：2174 / 2180

页数：7

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