Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films -: art. no. 042901

被引:112
作者
Oligschlaeger, R [1 ]
Waser, R
Meyer, R
Karthäuser, S
Dittmann, R
机构
[1] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52074 Aachen, Germany
[2] FZ Juelich, CNI, D-52425 Julich, Germany
关键词
D O I
10.1063/1.2162860
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on resistive switching of capacitor-like SrRuO3/Ba0.7Sr0.3TiO3/Pt thin films epitaxially grown on SrTiO3 substrates. We observe a weak but stable hysteresis in the current-voltage curve. By applying short voltage pulses, a high or low resistive state as well as intermediate states can be addressed even at room temperature. We demonstrate a multiple-branch hysteresis curve corresponding to multilevel switching modus revealing different subloops for different write voltages. Furthermore reliability issues such as cycling endurance and data retention are presented. Read-write operations over 10 000 cycles show a fatigue-like drift of both resistance states. No data loss is found upon continuous readout.
引用
收藏
页码:1 / 3
页数:3
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