Growth of faceted, ballas-like and nanocrystalline diamond films deposited in CH4/H2/Ar MPCVD

被引:69
作者
Yang, TS
Lai, JY
Cheng, CL
Wong, MS [1 ]
机构
[1] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Hualien, Taiwan
[2] Natl Dong Hwa Univ, Dept Phys, Hualien, Taiwan
基金
美国国家科学基金会;
关键词
argon plasma; ballas diamond; nanocrystyalline diamond; microwave plasma-assisted chemical vapor deposition (MPCVD);
D O I
10.1016/S0925-9635(01)00495-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of Ar addition to CH4/H-2 plasma on the crystallinity, morphology and growth rate of the diamond films deposited in MPCVD was investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. X-Ray diffraction patterns indicate that diamond films of strong (111) and weak (400) texture are produced in these samples. Faceted diamond gradually turns into ballas-like diamond with graphitic inclusions when the Ar concentration increases to above 30 vol.%, as indicated by Raman spectra. As the Ar concentration goes above 90 vol.%, nanocrystalline diamond films are formed, characterized by a 1150-cm (-1) peak in the Raman spectra and morphology observation. Diamond growth by CH3 or by C-2 mechanism is proposed to interpret the change in the growth rate of diamond films with the variation of Ar content in the plasma. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:2161 / 2166
页数:6
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