Charge Transfer and Current Fluctuations in Single Layer Graphene Transistors Modifi ed by Self-Assembled C60 Adlayers

被引：18

作者：

Wang, Rui ^{[1
]}

Wang, Shengnan ^{[1
]}

Wang, Xiaowei ^{[1
]}

Meyer, Jakob A. S. ^{[2
,3
,4
]}

Hedegard, Per ^{[2
,3
]}

Laursen, Bo W. ^{[2
,5
]}

Cheng, Zhihai ^{[1
]}

Qiu, Xiaohui ^{[1
]}

机构：

[1] Chinese Acad Sci, Natl Ctr Nanosci & Technol, Key Lab Standardizat & Measurement Nanotechnol, Beijing 100190, Peoples R China

[2] Univ Copenhagen, Nanosci Ctr, DK-2100 Copenhagen, Denmark

[3] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark

[4] Univ Chinese Acad Sci, Sino Danish Ctr Educ & Res SDC, Beijing 100049, Peoples R China

[5] Univ Copenhagen, Dept Chem, DK-2100 Copenhagen, Denmark

来源：

SMALL | 2013年 / 9卷 / 14期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

graphene; fullerenes; charge transfer; 1; f noise; transistors; LOW-FREQUENCY NOISE; RAMAN-SPECTROSCOPY; ELECTRONIC-STRUCTURE; CARBON NANOTUBES; SOLAR-CELLS; 1/F NOISE; MOLECULES; GROWTH; FILMS; SIO2;

D O I：

10.1002/smll.201300869

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Flicker noise in a "fullerene + graphene" hybrid transistor is investigated to reveal the electrical coupling between the graphene channel and C60 adsorbates. The charge trapping and detrapping events at the C60/graphene interface induce current fluctuations in the devices. The evolution of noise characteristics at varying temperatures indicates the different contributions related to Coulomb scattering and charge exchange kinetics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2420 / 2426

页数：7

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