Synthesis of β-SiC nanowires by ball milled nanoparticles of silicon and carbon

被引:22
作者
Kang, Pengchao [1 ]
Zhang, Bin [1 ]
Wu, Gaohui [1 ]
Gou, Huasong [1 ]
Chen, Guoqin [1 ]
Jiang, Longtao [1 ]
Mula, Suhrit [2 ]
机构
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
[2] Indian Inst Technol Roorkee, Dept Met & Mat Engn, Roorkee 247667, Uttar Pradesh, India
关键词
SiC nanowires; Nanoparticle chains; Self-assembly; Growth mechanism; Electron microscopy; IN-SITU GROWTH; 3C-SIC NANOWIRES; FIELD-EMISSION; CARBIDE; NANOTUBES;
D O I
10.1016/j.jallcom.2014.03.011
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In the present investigation, we report a simple and new technique to synthesize silicon carbide nanowires by high energy ball milling of silicon and carbon powders followed by annealing at elevated temperatures. The detailed structural analysis was carried out by X-ray diffraction, scanning and transmission electron microscopy, and FT-IR analysis. Nanocrystalline silicon particles were detected to be covered by amorphous carbon after milling. This typical structure was transformed to beta-SiC nanowires during annealing by new growth mechanism. The beta-SiC nanoparticles were found to be self-assembled one by one and formed a curly chain, and then rotated gradually in accordance to the same crystal orientation along the beta-SiC [111] direction. (C) 2014 Elsevier B. V. All rights reserved.
引用
收藏
页码:304 / 308
页数:5
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