Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

被引：24

作者：

Kiani, Ahmed ^{[1
]}

Hasko, David G. ^{[1
]}

Milne, William I. ^{[1
,2
]}

Flewitt, Andrew J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England

[2] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

SEMICONDUCTORS; RESISTANCE; OXIDATION; ATOMS;

D O I：

10.1063/1.4801991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4801991]

引用

页数：5

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