A novel elementary single electron transistor negative differential resistance device

被引：4

作者：

Mahapatra, S ^{[1
]}

Ionescu, AM ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, EPFL, Inst Microelect & Microsyst, Elect Lab, CH-1015 Lausanne, Switzerland

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 02期

关键词：

single electron transistor (SET); negative differential resistance (NDR);

D O I：

10.1143/JJAP.43.538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel elementary single electron transistor (SET) device architecture providing negative differential resistance (NDR) is proposed and verified with SET analytical models. The proposed architecture consists of two cross-connected SETs, biased with constant current source, and it exhibits negative differential resistance for a significant range of input voltage. The effects of bias current and SET asymmetry on the circuit characteristics are shown from a design perspective. Comparison of the proposed architecture with other NDR devices is also presented.

引用

页码：538 / 539

页数：2

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