100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies

被引：0

作者：

Shi, Jinshan ^{[1
]}

Wichmann, N. ^{[1
]}

Roelens, Y. ^{[1
]}

Bollaert, S. ^{[1
]}

机构：

[1] Univ Lille, UMR CNRS 8520, Inst Elect Microelect & Nanotechnol Technol, F-59652 Villeneuve Dascq, France

来源：

2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年

关键词：

TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the transfer of 100nm-gate length high electron mobility transistors onto plastic flexible substrate. The layers of transistors are grown epitaxially on indium phosphide (InP) bulk substrate. The transfer of these transistors onto polyimide substrate is realized by an adhesive bonding technique. High cut-off frequencies f(T) = 120GHz, f(max) = 280GHz are demonstrated. These microwave performances are comparable with results obtained on 100nm-gate HEMT on rigid substrate (HEMT-RS), which provides a strong possibility to integrate high-frequency communication systems and high-speed processing applications into the flexible device in the near future.

引用

页码：233 / 236

页数：4

共 6 条

[1] Kink effect in an InAs-inserted-channel InAlAs/InGaAs inverted HEMT at low temperature [J].