Quantum-well anisotropic forbidden transitions induced by a common-atom interface potential

被引:13
作者
Chen, YH [1 ]
Yang, Z
Wang, ZG
Bo, X
Liang, JB
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 03期
关键词
D O I
10.1103/PhysRevB.60.1783
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A prominent effect of the interface potential (IP) [E. L. Ivchenko and A. Yu. Kaminski, Phys. Rev. B 54, 5852 (1996); O. Krebs and P. Voisin, Phys. Rev. Lett. 77, 1829 (1996)], the optical anisotropy of the forbidden transitions in quantum wells has been observed by reflectance-difference spectroscopy. Predictions by the heavy-light-hole coupling IP models are qualitatively consistent with all the observed features of the forbidden and the allowed transitions. The fact that the predicted value of the relative, transition strength, which depends on neither the IP strength nor the electric field, disagrees with the observed one indicates that coupling involving X and/or L bands may also be important. [S0163-1829(99)04227-7].
引用
收藏
页码:1783 / 1786
页数:4
相关论文
共 12 条
[1]   Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix [J].
Chen, YH ;
Yang, Z ;
Wang, ZG ;
Xu, B ;
Liang, JB ;
Qian, JJ .
PHYSICAL REVIEW B, 1997, 56 (11) :6770-6773
[2]   Heavy-light hole mixing at zinc-blende (001) interfaces under normal incidence [J].
Ivchenko, EL ;
Kaminski, AY ;
Rossler, U .
PHYSICAL REVIEW B, 1996, 54 (08) :5852-5859
[3]   DETERMINATION OF ENERGY-BAND DISPERSION-CURVES IN STRAINED-LAYER STRUCTURES [J].
JONES, ED ;
LYO, SK ;
FRITZ, IJ ;
KLEM, JF ;
SCHIRBER, JE ;
TIGGES, CP ;
DRUMMOND, TJ .
APPLIED PHYSICS LETTERS, 1989, 54 (22) :2227-2229
[4]   Investigations of giant 'forbidden' optical anisotropy in GaInAs-InP quantum well structures [J].
Krebs, O ;
Seidel, W ;
Andre, JP ;
Bertho, D ;
Jouanin, C ;
Voisin, P .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (07) :938-942
[5]   Giant optical anisotropy of semiconductor heterostructures with no common atom and the quantum-confined pockels effect [J].
Krebs, O ;
Voisin, P .
PHYSICAL REVIEW LETTERS, 1996, 77 (09) :1829-1832
[6]   Inversion asymmetry in heterostructures of zinc-blende semiconductors: Interface and external potential versus bulk effects [J].
Krebs, O ;
Rondi, D ;
Gentner, JL ;
Goldstein, L ;
Voisin, P .
PHYSICAL REVIEW LETTERS, 1998, 80 (26) :5770-5773
[7]   GIANT ELECTROPLEOCHROISM IN GAAS-(AL,GA) AS HETEROSTRUCTURES - THE QUANTUM-WELL POCKELS EFFECT [J].
KWOK, SH ;
GRAHN, HT ;
PLOOG, K ;
MERLIN, R .
PHYSICAL REVIEW LETTERS, 1992, 69 (06) :973-976
[8]   Observation of giant birefringence and dichroism in InP-AlInAs type II superlattices [J].
Seidel, W ;
Voisin, P ;
Andre, JP ;
Bogani, F .
SOLID-STATE ELECTRONICS, 1996, 40 (1-8) :729-732
[9]  
SHAWN YL, 1995, APPL PHYS LETT, V67, P2170
[10]   ABSORPTION-SPECTROSCOPY STUDIES OF STRAINED INGAAS/GAAS SINGLE-QUANTUM WELLS [J].
SHEN, WZ ;
TANG, WG ;
SHEN, SC ;
WANG, SM ;
ANDERSSON, T .
APPLIED PHYSICS LETTERS, 1994, 65 (21) :2728-2730