Failure mechanisms of DC and capacitive RF MEMS switches

被引:0
作者
Patton, Steven T. [1 ]
Zabinski, Jeffrey S. [2 ]
机构
[1] Univ Dayton, Res Inst, Dayton, OH 45469 USA
[2] US Air Force, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
来源
RELIABILITY, PACKAGING, TESTING, AND CHARACTERIZATION OF MEMS/ MOEMS V | 2006年 / 6111卷
关键词
tribology; microelectromechanical systems; RF switches; adhesion; contact resistance; reliability; durability; shorting; parasitic dielectric charging; electrostatic force;
D O I
10.1117/12.644162
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Microelectromechanical systems (MEMS) radio frequency (RF) switches hold great promise in a myriad of commercial, aerospace, and military applications including cellular phones and phased array antennas. However. there is limited understanding of the factors determining the performance and reliability of these devices. Fundamental studies of hot-switched DC (gold versus gold) and capacitive (gold versus silicon nitride) MEMS RF switch contacts were conducted in a controlled air environment at MEMS-scale forces using a micro/nanoadhesion apparatus as a switch simulator. This paper reviews key experimental results from the switch simulator and how they relate to failure mechanisms of MEMS switches. For DC switch contacts, electric current had a profound effect on deformation mechanisms, adhesion, contact resistance (R), and reliability/durability. At low current (1-10 mu A), junction growth/force relaxation, slightly higher R, and switching induced adhesion growth were prominent. At high current (1-10 mA), asperity melting, slightly lower R. and shorting were present. Adhesion increased during cycling at low current and was linked to the creation of smooth contact surfaces, increased van der Waals interaction, and chemical bonding. Surface roughening by nanowire formation (which also caused shorting) prevented adhesion at high current. Aging of the contacts in air led to hydrocarbon adsorption and less adhesion. Studies of capacitive switches demonstrated that excessive adhesion was the primary failure mechanism and that both mechanical and electrical effects were contributing factors. The mechanical effect is adhesion growth with cycling due to surface smoothening, which allows increased van der Waals interaction and chemical bonding. The electrical effect on adhesion is due to electrostatic force associated with trapped parasitic charge in the dielectric, and was only observed after operating the switch at 40 V bias and above. The two effects are additive; however, the electrical effect was not present until the surfaces were worn smooth by cycling. Surface smoothening increases the electric field in the dielectric, which results in trapped charges, alterations in electrostatic force, and higher adhesion. Excessive adhesion can explain decreased lifetime at high bias voltage previously reported with actual capacitive MEMS switches. Switch sticking. self actuation, failure to actuate, and self release can all be explained by the experimental results.
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页数:20
相关论文
共 30 条
[1]  
Barker NS, 1998, IEEE T MICROW THEORY, V46, P1881, DOI 10.1109/22.734503
[2]  
BECHER D, 2002, GAAS MANTECH C SAN D
[3]   RF-MEMS switches for reconfigurable integrated circuits [J].
Brown, ER .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (11) :1868-1880
[4]  
Goldsmith C, 2001, IEEE MTT-S, P227, DOI 10.1109/MWSYM.2001.966876
[5]   A low-voltage actuated micromachined microwave switch using torsion springs and leverage [J].
Hah, D ;
Yoon, E ;
Hong, S .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (12) :2540-2545
[6]  
Holm R., 1958, Electric Contacts Handbook
[7]   GaAs-compatible surface-micromachined RF MEMS switches [J].
Hyman, D ;
Schmitz, A ;
Warneke, B ;
Hsu, TY ;
Lam, J ;
Brown, J ;
Schaffner, J ;
Walston, A ;
Loo, RY ;
Tangonan, GL ;
Mehregany, M ;
Lee, J .
ELECTRONICS LETTERS, 1999, 35 (03) :224-226
[8]  
JENSEN BD, 2003, 6 ASME JSME THERM EN
[9]  
LAFONTAN X, 2001, P SOC PHOTO-OPT INS, V4558, P233
[10]   Bulk micromachined relay with lateral contact [J].
Li, ZH ;
Zhang, DC ;
Li, T ;
Wang, W ;
Wu, GY .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2000, 10 (03) :329-333