High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)

被引：1

作者：

Liu Yu-Rong ^{[1
,2
]}

Lai Pei-Tao ^{[3
]}

Yao Ruo-He ^{[1
,2
]}

机构：

[1] S China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China

[2] S China Univ Technol, Guangdong Prov Key Lab Short Range Wireless Detec, Guangzhou 510640, Guangdong, Peoples R China

[3] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

CHINESE PHYSICS B | 2012年 / 21卷 / 08期

基金：

中国国家自然科学基金;

关键词：

semiconducting polymer; thin film transistor; photosensitivity; phototransistor; FIELD-EFFECT TRANSISTORS; CONJUGATED POLYMERS; DEVICE;

D O I：

10.1088/1674-1056/21/8/088503

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are fabricated by the spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illumination. The photosensitivity of the device is strongly modulated by gate voltage under various illuminations. When the device is in the subthreshold operating mode, a significant increase in its drain current is observed with a maximum photosensitivity of 1.7 x 10(-3) at an illumination intensity of 1200 lx, and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx. However, when the device is in the on-state operating mode, the photosensitivity is very low: only 1.88 at an illumination intensity of 1200 lx for a gate voltage of -20 V and a drain voltage of -20 V. The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light. The modulation mechanism of the photosensitivity in the PTFT is discussed in detail.

引用

页数：6

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