Phonon structure of InN grown by atomic layer epitaxy

被引：114
|
作者：
Inushima, T
Shiraishi, T
Davydov, VY
机构：
[1] Tokai Univ, Dept Commun Engn, Hiratsuka, Kanagawa 2591292, Japan
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 110卷 / 09期
关键词：
semiconductors; epitaxy; phonons; inelastic light scattering;
D O I：
10.1016/S0038-1098(99)00108-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
InN single crystal was grown by W-assisted atomic layer epitaxy under atmospheric pressure. The c-axis was perpendicular to the c-plane of sapphire substrate. The obtained InN was a degenerate n-type semiconductor with the carrier concentration of similar to 3 x 10(20)/cm(3). The phonon structure was investigated by the use of infrared and Raman spectra, and six optical phonons were observed; A(1)(TO) at 480 cm(-1), A(1)(LO) at 580 cm(-1), E-1(TO) at 476 cm(-1), E-1(LO) at 570 cm(-1), E-2(low) at 87 and E-2(high) at 488 cm(-1). Moreover two silent B-1 modes were observed at 200 and 540 cm(-1). From the plasma reflection spectra, dielectric constants of epsilon(0) = 8.1, epsilon(infinity) = 5.8 and effective electron mass of m(e perpendicular to)* = 0.24m(0) were obtained. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：491 / 495
页数：5
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