Waveguide design for mid- and far-infrared p-Si/SiGe quantum cascade lasers

被引：15
作者：
Ikonic, Z [1 ]
Kelsall, RW [1 ]
Harrison, P [1 ]
机构：
[1] Univ Leeds, Sch Elect & Elect Engn, Inst Microwaves & Photon, Leeds LS2 9JT, W Yorkshire, England
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 01期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1088/0268-1242/19/1/013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Design considerations are presented for waveguides to be used in p-Si/SiGe based quantum cascade lasers operating in the mid- and far-infrared wavelength ranges. Modal losses and confinement factors are calculated for both TM and TE modes in conventional double metal clad structures, metal-highly doped semiconductor layer structures and also in novel metal-metal silicide structures. Guidelines for choosing the confinement and contact layer parameters are given.
引用
收藏
页码：76 / 81
页数：6
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