Highly oriented ZnO thin films deposited on Ru/Si substrates

被引：0

作者：

Lim, WT ^{[1
]}

Lee, CH ^{[1
]}

机构：

[1] Hanyang Univ, Dept Phys, Seoul 133791, South Korea

来源：

THIN SOLID FILMS | 1999年 / 353卷 / 1-2期

关键词：

sputtering; structural properties; zinc oxide;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural properties of r.f.-sputtered ZnO films prepared onto a Ru/Si and an Al/Si substrate were investigated. The ZnO films were deposited at a substrate temperature of 350 degrees C, O-2/Ar ratio of 3/7, working pressure of 0.8 Pa, and r.f. power of 80 W. The (002) peak intensity of the ZnO films on the Ru/Si is about five times stronger than that of the ZnO film on the Al/Si substrate. For the ZnO film deposited on the Al/Si substrate, the crystallite size was 312.75 Angstrom and the biaxial stress was -9.86 x 10(8) Pa. For the ZnO films on the Ru/Si substrate, the crystallite size was 333.66 Angstrom and biaxial stress was -1.37 x 10(8) Pa. The ZnO films on the Ru/Si substrate have a much denser structure than the ZnO films do on the Al/Si substrate. It has been found that the Ru/Si substrate is a very suitable substrate for growing the ZnO films. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：12 / 15

页数：4

共 13 条

[1] HIGH-RATE (APPROXIMATELY 50-A/S) DEPOSITION OF ZNO FILMS FOR AMORPHOUS-SILICON ALLOY SOLAR-CELL BACK-REFLECTOR APPLICATION [J].