Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films

被引:0
作者
Myroniuk, D. V. [1 ]
Lashkarev, G. V. [1 ]
Shtepliuk, I. I. [1 ]
Lazorenko, V. Y. [1 ]
Maslyuk, V. T. [2 ]
Timofeeva, I. I. [1 ]
Romaniuk, A. S. [3 ]
Strelchuk, V. V. [3 ]
Kolomys, O. F. [3 ]
Khomyak, V. V. [4 ]
机构
[1] NAS Ukraine, Frantsevich Inst Problems Mat Sci, UA-03680 Kiev, Ukraine
[2] NAS Ukraine, Inst Electron Phys, UA-88017 Uzhgorod, Ukraine
[3] NAS Ukraine, Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
[4] Fedkovich Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine
关键词
ZINC-OXIDE; LUMINESCENCE; EMISSION; DONOR;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences 10(16) and 2 x 10(16) cm(-2). As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.
引用
收藏
页码:891 / 894
页数:4
相关论文
共 22 条
[1]   A comparative analysis of deep level emission in ZnO layers deposited by various methods [J].
Ahn, Cheol Hyoun ;
Kim, Young Yi ;
Kim, Dong Chan ;
Mohanta, Sanjay Kumar ;
Cho, Hyung Koun .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (01)
[2]   Optical properties of ZnO and ZnO:In nanorods assembled by sol-gel method -: art. no. 134701 [J].
Chen, YW ;
Liu, YC ;
Lu, SX ;
Xu, CS ;
Shao, CL ;
Wang, C ;
Zhang, JY ;
Lu, YM ;
Shen, DZ ;
Fan, XW .
JOURNAL OF CHEMICAL PHYSICS, 2005, 123 (13)
[3]  
Cullity B.D., 1956, WLEMENTS XRAY DIFFRA, P371
[4]   Uniaxial locked epitaxy of ZnO on the a face of sapphire [J].
Fons, P ;
Iwata, K ;
Yamada, A ;
Matsubara, K ;
Niki, S ;
Nakahara, K ;
Tanabe, T ;
Takasu, H .
APPLIED PHYSICS LETTERS, 2000, 77 (12) :1801-1803
[5]   CONTROL OF PREFERRED ORIENTATION FOR ZNOX FILMS - CONTROL OF SELF-TEXTURE [J].
FUJIMURA, N ;
NISHIHARA, T ;
GOTO, S ;
XU, JF ;
ITO, T .
JOURNAL OF CRYSTAL GROWTH, 1993, 130 (1-2) :269-279
[6]   DONOR-ACCEPTOR NATURE OF BLUE SELF-ACTIVATED EMISSION IN ZNS CRYSTALS [J].
JAMES, JR ;
NICHOLLS, JE ;
CAVENETT, BC ;
DAVIES, JJ ;
DUNSTAN, DJ .
SOLID STATE COMMUNICATIONS, 1975, 17 (08) :969-972
[7]   The influence of defect drift in external electric field on green luminescence of ZnO single crystals [J].
Korsunska, NO ;
Borkovska, LV ;
Bulakh, BM ;
Khomenkova, LY ;
Kushnirenko, VI ;
Markevich, IV .
JOURNAL OF LUMINESCENCE, 2003, 102 :733-736
[8]   Properties of zinc oxide at low and moderate temperatures [J].
Lashkarev, G. V. ;
Karpyna, V. A. ;
Lazorenko, V. I. ;
Ievtushenko, A. I. ;
Shtepliuk, I. I. ;
Khranovskyy, V. D. .
LOW TEMPERATURE PHYSICS, 2011, 37 (03) :226-234
[9]  
Leiter FH, 2001, PHYS STATUS SOLIDI B, V226, pR4, DOI 10.1002/1521-3951(200107)226:1<R4::AID-PSSB99994>3.0.CO
[10]  
2-F