Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation

被引：3
|
作者：
Hao, Ji-Long [1 ,2 ]
Bai, Yun [1 ,2 ]
Liu, Xin-Yu [1 ,2 ]
Li, Cheng-Zhan [3 ]
Tang, Yi-Dan [1 ,2 ]
Chen, Hong [1 ,2 ]
Tian, Xiao-Li [1 ,2 ]
Lu, Jiang [1 ,2 ]
Wang, Sheng-Kai [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Zhuzhou CRRC Times Elect Co Ltd, Zhuzhou 412000, Peoples R China
来源：
CHINESE PHYSICS B | 2020年 / 29卷 / 09期
基金：
中国国家自然科学基金;
关键词：
SiC; electron irradiation; interface traps; MOS; PASSIVATION; TEMPERATURE; MOBILITY; OXIDE;
D O I：
10.1088/1674-1056/ab9434
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Effective improvement in electrical properties of NO passivated SiC/SiO(2)interface after being irradiated by electrons is demonstrated. The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude, specifically, from 3x10(12)cm(-2).eV(-1)to 4x10(11)cm(-2).eV(-1)at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field. Particularly, the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation, indicating that the carbon-related defects are further reduced.
引用
收藏
页数：6
相关论文
共 50 条
  • [41] Effect of nitrogen introduced at the SiC/SiO2 interface and SiC side on the electronic states by first-principles calculation
    Tachiki, Keita
    Nishiya, Yusuke
    Iwata, Jun-Ichi
    Matsushita, Yu-ichiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (06)
  • [42] Reduction in the density of interface states at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium
    Hermannsson, Petur Gordon
    Sveinbjornsson, Einar O.
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 334 - 337
  • [43] Optical properties of SiC/SiO2 composite thin film
    Yi, Jian
    He, XiaoDong
    Sun, Yue
    Li, Yao
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2007, 49 (07) : 1551 - 1553
  • [44] Defects of the SiC/SiO2 interface:: energetics of the elementary steps of the oxidation reaction
    Deák, P
    Gali, A
    Knaup, J
    Hajnal, Z
    Frauenheim, T
    Ordejón, P
    Choyke, JW
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 1069 - 1073
  • [45] XPS analysis of SiO2/SiC interface annealed in nitric oxide ambient
    Li, HF
    Dimitrijev, S
    Sweatman, D
    Harrison, HB
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 399 - 402
  • [46] TEM Observation Of SiO2/4H-SiC Hetero Interface
    Matsuhata, Hirofumi
    Senzaki, Junji
    Nagai, Ichiro
    Yamaguchi, Hirotaka
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 671 - 674
  • [47] SIMS analyses of SiO2/4H-SiC(0001) interface
    Yamashita, K
    Kitabatake, M
    Kusumoto, P
    Takahashi, K
    Uchida, M
    Miyanaga, R
    Itoh, H
    Yoshikawa, M
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1037 - 1040
  • [48] Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface
    Kagoshima, E.
    Takeuchi, W.
    Kutsuki, K.
    Sakashita, M.
    Fujiwara, H.
    Nakatsuka, O.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SC)
  • [49] Effect of laser irradiation on the structures properties such as SiO2/Si
    Veiko, V. P.
    Skvortsov, A. M.
    Sokolov, V. I.
    Pham Quang Tung
    Khalecki, R. A.
    Efimov, E. I.
    FUNDAMENTALS OF LASER-ASSISTED MICRO- AND NANOTECHNOLOGIES 2010, 2011, 7996
  • [50] The Effects of Boron Passivation and Re-Oxidation on the Properties of the 4H-SiC/SiO2 Interface
    Jeong, Chungbu
    Kim, Kwangsoo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2019, 74 (07) : 679 - 683
12345