Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation

被引：3
|
作者：
Hao, Ji-Long [1 ,2 ]
Bai, Yun [1 ,2 ]
Liu, Xin-Yu [1 ,2 ]
Li, Cheng-Zhan [3 ]
Tang, Yi-Dan [1 ,2 ]
Chen, Hong [1 ,2 ]
Tian, Xiao-Li [1 ,2 ]
Lu, Jiang [1 ,2 ]
Wang, Sheng-Kai [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Zhuzhou CRRC Times Elect Co Ltd, Zhuzhou 412000, Peoples R China
来源：
CHINESE PHYSICS B | 2020年 / 29卷 / 09期
基金：
中国国家自然科学基金;
关键词：
SiC; electron irradiation; interface traps; MOS; PASSIVATION; TEMPERATURE; MOBILITY; OXIDE;
D O I：
10.1088/1674-1056/ab9434
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Effective improvement in electrical properties of NO passivated SiC/SiO(2)interface after being irradiated by electrons is demonstrated. The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude, specifically, from 3x10(12)cm(-2).eV(-1)to 4x10(11)cm(-2).eV(-1)at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field. Particularly, the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation, indicating that the carbon-related defects are further reduced.
引用
收藏
页数：6
相关论文
共 50 条
  • [31] Phosphorous passivation of the SiO2/4H-SiC interface
    Sharma, Y. K.
    Ahyi, A. C.
    Issacs-Smith, T.
    Shen, X.
    Pantelides, S. T.
    Zhu, X.
    Feldman, L. C.
    Rozen, J.
    Williams, J. R.
    SOLID-STATE ELECTRONICS, 2012, 68 : 103 - 107
  • [32] Research on Interface Properties of Thermally Grown SiO2 and ALD SiO2 Stacked Structures
    Li, Shuai
    Luo, Jun
    Ye, Tianchun
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 12 (05)
  • [33] Electrical behaviour of Al/SiO2/Si structures with SiC nanocrystals
    Horváth, ZJ
    Dózsa, L
    Krafcsik, OH
    Mohácsy, T
    Vida, G
    APPLIED SURFACE SCIENCE, 2004, 234 (1-4) : 67 - 71
  • [34] HF OR AU IMPLANTATION INTO SIO2 BY ELECTRON-IRRADIATION
    MAEDA, M
    MORI, H
    SAKATA, T
    YASUDA, H
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1993, 57 (12) : 1380 - 1384
  • [35] Investigation of electrical and compositional properties of SiO2/Au/SiO2 for nonvolatile memory application
    Vinod, Arun
    Rathore, Mahendra Singh
    Nelamarri, Srinivasa Rao
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 124 (08):
  • [36] Carrier capture and emission properties of silicon interstitial defects in near SiC/SiO2 interface region
    Zhang, Fanglong
    Yang, Chao
    Su, Yan
    Wang, Dejun
    APPLIED SURFACE SCIENCE, 2020, 514
  • [37] Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface
    Lu, CY
    Cooper, JA
    Tsuji, T
    Chung, G
    Williams, JR
    McDonald, K
    Feldman, LC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (07) : 1582 - 1588
  • [38] Electron energy band alignment at the NiO/SiO2 interface
    Afanas'ev, V. V.
    Badylevich, M.
    Houssa, M.
    Stesmans, A.
    Aggrawal, Gagan
    Campbell, S. A.
    APPLIED PHYSICS LETTERS, 2010, 96 (17)
  • [39] Nitrogen and hydrogen induced trap passivation at the SiO2/4H-SiC interface
    Dhar, S.
    Wang, S.
    Ahyi, A. C.
    Isaacs-Smith, T.
    Pantelides, S. T.
    Williams, J. R.
    Feldman, L. C.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 949 - 954
  • [40] Improvement of Electrical Performance of HfO2/SiO2/4H-SiC Structure with Thin SiO2
    Hsu, Chia-Ming
    Hwu, Jenn-Gwo
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (08) : N3072 - N3078
12345