Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation

被引：3
|
作者：
Hao, Ji-Long [1 ,2 ]
Bai, Yun [1 ,2 ]
Liu, Xin-Yu [1 ,2 ]
Li, Cheng-Zhan [3 ]
Tang, Yi-Dan [1 ,2 ]
Chen, Hong [1 ,2 ]
Tian, Xiao-Li [1 ,2 ]
Lu, Jiang [1 ,2 ]
Wang, Sheng-Kai [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Zhuzhou CRRC Times Elect Co Ltd, Zhuzhou 412000, Peoples R China
来源：
CHINESE PHYSICS B | 2020年 / 29卷 / 09期
基金：
中国国家自然科学基金;
关键词：
SiC; electron irradiation; interface traps; MOS; PASSIVATION; TEMPERATURE; MOBILITY; OXIDE;
D O I：
10.1088/1674-1056/ab9434
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Effective improvement in electrical properties of NO passivated SiC/SiO(2)interface after being irradiated by electrons is demonstrated. The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude, specifically, from 3x10(12)cm(-2).eV(-1)to 4x10(11)cm(-2).eV(-1)at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field. Particularly, the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation, indicating that the carbon-related defects are further reduced.
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收藏
页数：6
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