Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation

被引：3

作者：

Hao, Ji-Long ^{[1
,2
]}

Bai, Yun ^{[1
,2
]}

Liu, Xin-Yu ^{[1
,2
]}

Li, Cheng-Zhan ^{[3
]}

Tang, Yi-Dan ^{[1
,2
]}

Chen, Hong ^{[1
,2
]}

Tian, Xiao-Li ^{[1
,2
]}

Lu, Jiang ^{[1
,2
]}

Wang, Sheng-Kai ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Zhuzhou CRRC Times Elect Co Ltd, Zhuzhou 412000, Peoples R China

来源：

CHINESE PHYSICS B | 2020年 / 29卷 / 09期

基金：

中国国家自然科学基金;

关键词：

SiC; electron irradiation; interface traps; MOS; PASSIVATION; TEMPERATURE; MOBILITY; OXIDE;

D O I：

10.1088/1674-1056/ab9434

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Effective improvement in electrical properties of NO passivated SiC/SiO(2)interface after being irradiated by electrons is demonstrated. The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude, specifically, from 3x10(12)cm(-2).eV(-1)to 4x10(11)cm(-2).eV(-1)at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field. Particularly, the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation, indicating that the carbon-related defects are further reduced.

引用

页数：6

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