A comprehensive compact-modeling methodology for spiral inductors in silicon-based RFICs

被引：82
作者：
Watson, AC [1 ]
Melendy, D
Francis, P
Hwang, K
Weisshaar, A
机构：
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
[2] Natl Semicond Corp, Santa Clara, CA 95052 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2004年 / 52卷 / 03期
关键词：
distributed effects; equivalent-circuit model; integrated passives; proximity effect; RF integrated circuit (RFIC); silicon; skin effect; spiral inductors; substrate eddy currents;
D O I：
10.1109/TMTT.2004.823594
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new comprehensive wide-band compact-modeling methodology for on-chip spiral inductors is presented. The new modeling methodology creates an equivalent-circuit model consisting of frequency-independent circuit elements. A fast automated extraction procedure is developed for determining the circuit element values from two-port S-parameter measurement data. The methodology is extremely flexible in allowing for accurate modeling of general classes of spiral inductors on high- or low-resistivity substrate and for large spirals exhibiting distributed trends. The new modeling methodology is applied to general classes of spirals with various sizes and substrate parameters. The extracted models show excellent agreement with the measured data sets over the frequency range of 0.1-10 GHz.
引用
收藏
页码：849 / 857
页数：9
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