Very high efficiency triple junction solar cells grown by MOVPE

被引：54

作者：

Stan, M. ^{[1
]}

Aiken, D. ^{[1
]}

Cho, B. ^{[1
]}

Cornfeld, A. ^{[1
]}

Diaz, J. ^{[1
]}

Ley, V. ^{[1
]}

Korostyshevsky, A. ^{[1
]}

Patel, P. ^{[1
]}

Sharps, P. ^{[1
]}

Varghese, T. ^{[1
]}

机构：

[1] EMCORE Corp, Albuquerque, NM 87123 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期

关键词：

High-resolution X-ray diffraction; Metal-organic vapor-phase epitaxy; Semiconducting III-V materials; Solar cells;

D O I：

10.1016/j.jcrysgro.2008.07.024

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The GaInP/GaInAs/Ge triple junction (3J) space cell technology is nearing practical achievable conversion efficiency limits of similar to 30% under 1-sun AMO illumination. We present solar cell device-modeling results that indicate the GaInP/GaAs/GaInAs architecture with optimal bandgap energies will produce an additional 4% output power relative to the present GaInP/GaInAs/Ge 3J space cell technology. We have grown the GaInP/GaAs/GaInAs 3J cell on GaAs substrates in an inverted fashion incorporating a 1.0 eV metamorphic GaInAs cell, using metal-organic vapor-phase epitaxy (MOVPE) in a production scale reactor. Nearly strain-free growth of the metamorphic GaInAs cell was verified by high-resolution X-ray reciprocal space mapping. From cathodoluminescence (CL) data, the 1.0 eV metamorphic GaInAs cell threading dislocation density (TDD) is estimated to be 5 x 10(6) cm(-2). With this level of TDDs we are able to produce a 3J IMM cells with a one-sun AMO efficiency of 32%. In addition, external quantum efficiency (EQE) data suggests that improvements in current matching of the subcells will result in an AMO efficiency of 33%. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：5204 / 5208

页数：5

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