Influences of organic-inorganic interfacial properties on the performance of a hybrid near-infrared optical upconverter

被引:12
|
作者
Chu, Xinbo [1 ]
Guan, Min [1 ]
Zhang, Yang [1 ]
Li, Yiyang [1 ]
Liu, Xingfang [1 ]
Zhu, Zhanping [1 ]
Wang, Baoqiang [1 ]
Zeng, Yiping [1 ]
机构
[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源
RSC ADVANCES | 2013年 / 3卷 / 45期
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
LIGHT-EMITTING-DIODES; ELECTRONIC-STRUCTURE; CONVERSION DEVICE; ALIGNMENT; EFFICIENCY;
D O I
10.1039/c3ra43143f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this article, we explored in detail the influences of organic-inorganic interfacial properties on the performance of a hybrid near-infrared optical upconverter, mainly the leakage current and brightness. The upconverter that can convert input near-infrared to visible light was fabricated by directly integrating an organic light emitting diode (OLED) with an In0.12Ga0.88As/GaAs multi-quantum wells (MQWs) photodetector (PD). MoO3 doped perylene-3,4,9,10-tetra carboxylic dianhydride ( PTCDA) was inserted between the PD and OLED as an interfacial connection layer. The possible interaction mechanism of the PTCDA molecule on the GaAs surface such as p electron cloud spreading or Ga-O- \C bonds model was suggested and verified to explain the excellent hole injection property at the GaAs/MoO3: PTCDA interface. In addition, choosing an effective interface passivation layer was proven to retain leakage current markedly.
引用
收藏
页码:23503 / 23507
页数:5
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