Carrier-Induced Silicon Bragg Grating Filters With a p-i-n Junction

被引：9

作者：

Fang, Qing ^{[1
,2
]}

Song, Jun Feng ^{[1
,3
]}

Tu, Xiaoguang ^{[1
,2
]}

Jia, Lianxi ^{[1
,2
]}

Luo, Xianshu ^{[1
,2
]}

Yu, Mingbin ^{[1
,2
]}

Lo, Guo Qiang ^{[1
,2
]}

机构：

[1] Agcy Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore

[2] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China

[3] Jilin Univ, Coll Elect Sci & Engn, Changchun 100015, Jilin, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Bragg grating filter; carrier-induced; ion implantation; p-i-n junction; silicon photonics; RIB WAVE-GUIDES;

D O I：

10.1109/LPT.2013.2252611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we present a carrier-induced silicon waveguide Bragg grating filter with a p-i-n junction. The carrier-induced Bragg grating is formed on the rib silicon waveguide by ion implantation technology. The bandwidth and the extinction ratio of the filter are 0.3 nm and 14 dB, respectively. It can be tuned by both forward and reverse biases. The central wavelength shifting rates under forward and reverse biases are 1.35 and 0.52 pm/V, respectively. The extinction ratio can also be tuned. At the forward bias of 1.5 V, the extinction ratio is reduced from 14 to 5 dB.

引用

页码：810 / 812

页数：3

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