In situ biaxial texture analysis of MgO films during growth on amorphous substrates by ion beam-assisted deposition

被引:2
作者
Brewer, RT [1 ]
Arendt, PN [1 ]
Groves, JR [1 ]
Atwater, HA [1 ]
机构
[1] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA
来源
ENGINEERING THIN FILMS WITH ION BEAMS, NANOSCALE DIAGNOSTICS, AND MOLECULAR MANUFACTURING | 2001年 / 4468卷
关键词
IBAD; MgO; biaxial texture; RHEED; ion beam-assisted deposition;
D O I
10.1117/12.452547
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We used a kinematical electron scattering model(1) to develop a RHEED based method for performing quantitative analysis of mosaic polycrystalline thin film. in-plane and out-of-plain grain orientation distributions. RHEED based biaxial texture measurements are compared to X-Ray and transmission electron microscopy measurements to establish the validity of the RHEED analysis method. MgO was gown on amorphous Si3N4 by ion beam-assisted deposition (IBAD) using 750 eV Ar+ ions and MgO e-beam. evaporation. The ion/MgO flux ratio was varied between 0.66 and 0.42. In situ RHEED analysis reveals that during nucleation the out-of-plane orientation distribution is very broad (almost random), but narrows very quickly once well-oriented grains reach a critical size. Under optimal conditions a competition between selective sputtering and surface roughening yields a minimum out-of-plane texture at about 100 A, which degrades with increasing film thickness. The narrowest in-plane orientation distribution (5.4degrees FWHM) was found to be at an ion/MgO flux ratio between 0.55 and 0.51, in good agreement with previous experiments. The systematic offsets between RHEED analysis and X-ray measurements of biaxial texture, coupled with evidence that biaxial texture improves with increasing film thickness, indicates that RHEED is a superior technique for probing surface biaxial texture.
引用
收藏
页码:124 / 130
页数:3
相关论文
共 8 条
[1]  
Brewer RT, 2000, MATER RES SOC SYMP P, V585, P75
[2]   Rheed in-plane rocking curve analysis of biaxially-textured polycrystalline MgO films on amorphous substrates grown by ion beam-assisted deposition [J].
Brewer, RT ;
Hartman, JW ;
Groves, JR ;
Arendt, PN ;
Yashar, PC ;
Atwater, HA .
APPLIED SURFACE SCIENCE, 2001, 175 :691-696
[3]   Texture development mechanisms in ion beam assisted deposition [J].
Dong, L ;
Srolovitz, DJ .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) :5261-5269
[4]   GROWTH AND FERROELECTRICITY OF EPITAXIAL-LIKE BATIO3 FILMS ON SINGLE-CRYSTAL MGO, SRTIO3, AND SILICON SUBSTRATES SYNTHESIZED BY PULSED-LASER DEPOSITION [J].
LIN, WJ ;
TSENG, TY ;
LU, HB ;
TU, SL ;
YANG, SJ ;
LIN, IN .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) :6466-6471
[5]   Crystalline oxides on silicon: The first five monolayers [J].
McKee, RA ;
Walker, FJ ;
Chisholm, MF .
PHYSICAL REVIEW LETTERS, 1998, 81 (14) :3014-3017
[6]   Nucleation and growth behavior of epitaxial Pb(Zr,Ti)O3/MgO(100) observed by atomic force microscopy [J].
Wakiya, N ;
Kuroyanagi, K ;
Xuan, Y ;
Shinozaki, K ;
Mizutani, N .
THIN SOLID FILMS, 1999, 357 (02) :166-172
[7]   Deposition of in-plane textured MgO on amorphous Si3N4 substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia [J].
Wang, CP ;
Do, KB ;
Beasley, MR ;
Geballe, TH ;
Hammond, RH .
APPLIED PHYSICS LETTERS, 1997, 71 (20) :2955-2957
[8]  
WANG CS, 1999, THESIS STANFORD U