Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

被引：203
|
作者：
Lester, LF [1 ]
Stintz, A [1 ]
Li, H [1 ]
Newell, TC [1 ]
Pease, EA [1 ]
Fuchs, BA [1 ]
Malloy, KJ [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 08期
关键词：
epitaxial growth; quantum dots; semiconductor laser;
D O I：
10.1109/68.775303
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The optical characteristics of the first laser diodes fabricated from a single-InAs quantum-dot layer placed inside a strained InGaAs QW are described. The saturated modal gain for this novel laser active region is found to be 9-10 cm(-1) in the ground state. Room temperature threshold current densities as low as 83 A/cm(2) for uncoated 1.24-mu m devices are measured, and operating wavelengths over a 190-nm span are demonstrated.
引用
收藏
页码：931 / 933
页数：3
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