Precise control of multiwall carbon nanotube diameters using thermal chemical vapor deposition

被引：55

作者：

Siegal, MP ^{[1
]}

Overmyer, DL ^{[1
]}

Provencio, PP ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87122 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.1463204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We grow multiwall carbon nanotube (CNT) films using thermal chemical vapor deposition at atmospheric pressure using a mixture of acetylene and nitrogen from a 4-nm-thick Ni film catalyst. CNTs are characterized using electron microscopy and Rutherford backscattering spectrometry. CNTs grown with this method are extremely uniform in diameter, both throughout the sample and within the lengths of individual tubes. Nanotube outer diameters, ranging from 5-350 nm, and the total deposition of carbon material, increase exponentially with growth temperature from 630 degreesC-790 degreesC. (C) 2002 American Institute of Physics.

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页码：2171 / 2173

页数：3

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