Growth and transport properties of CuInSe2/ZnO heterostructure solar cell

被引：10

作者：

Dhananjay ^{[1
]}

Nagaraju, J

Krupanidhi, SB

机构：

[1] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India

[2] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 127卷 / 01期

关键词：

CuInSe2 thin films; heterostructure; built-in voltage;

D O I：

10.1016/j.mseb.2005.09.044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structural and transport properties of CuInSe2/ZnO heterostructure solar cell is investigated. X-ray diffraction pattern of CuInSe2 films exhibited preferred orientation along (1 12) direction confirming chalcopyrite structure. Structural characterization through scanning electron microscopy revealed dense grains. The electrical properties of the solar cells were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The dark I-V characteristics revealed that, in the low-field regime, conduction mechanisms follow Ohm's law and in the high-field region, space charge limited conduction was observed. Frequency-dependent capacitance studies were carried out to characterize the trap properties of the heterostructure. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：12 / 16

页数：5

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